rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks , and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 10 RFHA1027 500w gan wide - band pulsed power amplifier the RFHA1027 is a 50v 500w high power discrete amplifier designed for l - band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. the RFHA1027 is a matched power transistor packaged in a hermetic, flanged ceramic package. the package provides excellent thermal stability t hrough the use of advanced heat - sink and power dissipation technologies. ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. functional block diagram o rdering information RFHA1027 s2 sample bag with 2 pieces rfha102 7 sb bag with 5 pieces rfha102 7 sq bag with 25 pieces rfha102 7 sr 7 short reel with 50 pieces rfha102 7 tr13 13 reel with 250 pieces RFHA1027pcba - 410 fully assembled evaluation board optimized for 1.2 ghz to 1.4ghz; 50v package: flanged ceramic, 2 pin features wideband operation: 1.2ghz to 1.4ghz advanced gan hemt technology advanced heat - sink technology optimized evaluation board layout for 50 ? operation integrated matching components for high terminal impedances 50v operation typical performanc e ? output pulsed power 500w ? pulse width 1ms, duty cycle 10% ? small signal gain 16db ? high efficiency 5 5 % ? - 40 c to 85 c operation temperature applications radar air traffic control and surveillance genera l purpose broadband amplifiers RFHA1027 RFHA1027
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 2 of 10 rf ha1027 absolute maximum rat ings parameter rating unit drain voltage (v d ) 150 v gate voltage (v g ) - 8 to 2 v operating voltage 65 v ruggedness (vswr) 10:1 storage temperature range - 55 to +12 5 c operating temperature range (t c ) - 40 to +8 5 c operating junction temperature (t j ) 200 c human body model class 1a mttf (t j < 200 c, 95% confidence limits)* 1.8e + 07 hours mttf (t j < 2 5 0 c, 95% confidence limits)* 1.1e + 05 hours thermal resistance, r th (junction to case) c /w t c = 85 c, dc bias only 0.90 t c = 85 c, 100s pulse, 10% duty cycle t c = 85 c, 1ms pulse, 10% duty cycle 0.13 0.25 caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. * mttf C median time to failure for wear - out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operat ion, the device voltage and current must not exceed the maximum operating values specified in the table above . bias conditions should also satisfy the following expression: p diss < (t j C t c ) / r th j - c and t c = t case nominal operating parameters parameter specification unit condition min typ max recommended operating conditions drain voltage (v dsq ) 50 v gate voltage (v gsq ) - 8 - 3 .3 - 2 v drain bias current 750 ma frequency of operation 1200 1400 mhz dc functional test i g( o ff ) C gate leakage 3 ma v g = - 8v, v d = 0v i d( o ff ) C drain leakage 1 5 ma v g = - 8v, v d = 50v v gs ( th ) C threshold voltage - 3.5 v v d = 50v, i d = 40ma v ds( on ) C drain voltage at high current 0. 43 v v g = 0v, i d = 1.5a
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 3 of 10 rf ha1027 parameter specification unit condition min typ max rf functional test test conditions: pw = 1ms, dc = 10%, v dsq = 50v, i dq = 750ma, t = 25oc, performance in a standard tuned test fixture. power gain 12. 5 13. 6 db f = 1200mhz, p in = 44 dbm input return loss - 5 db output power 56.5 57 . 6 db m drain efficiency 5 3 % power gain 12.5 1 3 . 3 db f = 1300mhz, p in = 44dbm input return loss - 5 db output power 56.5 5 7 . 3 dbm drain efficiency 55 % power gain 12. 5 1 2 . 8 db f = 14 00mhz, p in = 44 dbm input return loss - 5 db output power 56.5 5 6. 8 db m drain efficiency 5 4 % rf typical performance frequency range 1200 1400 mhz low power gain 15.8 db p out = 36 dbm [1,2] power gain 13 . 3 db p in = 44 dbm [1,2] gain variation with temperature - 0.019 db/ c at peak output power [1,2] output power (p sat ) 57 dbm peak output power [1,2] 500 w drain efficiency 5 4 % at peak output power [1,2] [1] test conditions: pw = 1ms, dc = 10%, v dsq = 50v, i dq = 750ma, t = 25oc. [2] performance in a standard tuned test fixture.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 4 of 10 rf ha1027 t ypical performance in standard fixed tuned test fixture : t = 25c unless noted
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 5 of 10 rf ha1027 typical performance in standard fixed tuned test fixture : t = 25c unless noted (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 6 of 10 rf ha1027 evaluation board schematic evaluation board bill of materials (bom) component value manufacturer part number c1 680uf panasonic eeu - fc2a681 c11 0.1uf murata grm32nr72a104ka01l c13 0.1uf panasonic ecj - 2yb1h104k c14,c16 10uf panasonic eca - 2am100 c 2 2.7pf atc atc800a2r7bt c4, c6, c9, c10 100pf atc atc800a101jt c5 150pf atc atc800b151jt300x c7, c12 10000pf panasonic ecj - 2vb2a103k c8 0.1uf panasonic ecj - 2vb2a104k l1 68nh coilcraft 1812sms - 68njlb l2 82nh coilcraft 1812sms - 82njlb l3, l4 75 ohm, 10a steward 35f0121 - 1sr - 10 l5, l6 115 ohm, 10a steward 28f0181 - 1sr - 10 r1, r3 10 ohms panasonic erj - 8geyj100v r2 51 ohms panasonic erj - 8geyj510 rfha 1027 r 1 c 9 v gate c 4 50 ? ? strip 50 ? ? strip j 2 rf out l 1 l 2 c 13 c 16 + c 6 c 11 c 10 c 7 c 8 r 2 l 3 l 4 j 1 rf in l 5 l 6 c 14 + c 2 v drain c 5 r 3 c 12 c 15 c 1 +
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 7 of 10 rf ha1027 package drawing (dimensions in millimeters) pin names and descriptions pin name description 1 gate v g rf input 2 drain v d rf output 3 source ground base
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 8 of 10 rf ha1027 bias instruction for RFHA1027 evaluation board esd sensitive material. please use proper esd precautions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering eva luation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this ground terminal. 3. apply - 8v to vg. 4. apply 50v to vd. 5. increase v g until drain current reaches 750ma or desired bias point. 6. turn on the rf input. important note: depletion mode device - when biasing the device v g must be applied before v d . when removing bias v d must be removed before v g is removed. failure to follow sequ encing will cause the device to fail. note: for optimal rf performance, consistent and optimal heat removal from the base of the package is required. a thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. it is recommended a small amount of thermal grease is applied to the underside of the device package. even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. the package should then be bolted to the chassis and input and output leads soldered to the circuit board.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 9 of 10 rf ha1027 evaluation board layout device impedances frequency (mhz) z source () z load () 1200 38.1 + j4.5 18 C j1.0 1300 37.6 + j4.6 16 + j0.5 1400 36.7 + j4.5 17 + j1.6
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 d s140204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implica tion or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommend ed application circuitry and specifications at any time without prior notice. 10 of 10 rf ha1027 device handling/environmental conditions gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of the device. the physical manufactured characteristics of the device determin e the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages are varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = - 8v) and zero volts appli ed to the drain. during the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal capacitance measurements. the capacitan ce values pr esented in the typical characteristics table of the device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be ta ken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximu m limits. rfmd recommends applying v gs = - 5v before applying any v ds . rf power transistor perform ance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical p erformance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for biasing this device based on performance tradeoffs. mo unting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal characteristics. this is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at th e time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the maximum of 200 c. proper thermal design includes consideration of ambi ent temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.
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